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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET FOR SWITCHING
The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving systems,
1.6 0.1
PACKAGE DIMENSIONS (in mm)
0.3 0.05 0.1 +0.1 -0.05
Moreover, the 2SJ243 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems.
0.8 0.1
such as VCR cameras and headphone stereo systems.
D 0 to 0.1 G 0.2 0.5
+0.1 -0
S
FEATURES
* Small mounting area: about 60 % of the conventional mini-mold package (SC-70) * Can be directly driven by 3-V IC * Can be automatically mounted
0.5 1.0 1.6 0.1
0.6 0.75 0.05
EQUIVALENT CIRCUIT
Drain (D)
The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external constant-voltage diode is necessary.
Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: A1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW 10 ms Duty cycle 50 % 3.0 cm2 x 0.64 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -30 7 100 200 UNIT V A mA mA
Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature
PT Tch Topt Tstg
200 150 -55 to +80 -55 to +150
mW C C C
Document No. D11215EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
1996
2SJ243
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = -5V, ID = -10 mA VGS(on) = -5 V, RG = 10 RL = 500 TEST CONDITIONS VDS = -30 V, VGS = 0 VGS = 5 V, VDS = 0 VDS = -3 V, ID = -10 A VDS = -3 V, ID = 10 mA VGS = -2.5 V, ID = -1 mA VGS = -4.0 V, ID = -10 mA VDS = -5.0 V, VGS = 0, f = 1 MHz -1.6 20 0.1 -1.9 30 55 20 16 13 2 10 40 130 80 100 25 MIN. TYP. MAX. -1.0 3.0 -2.3 UNIT
A A
V mS pF pF pF ns ns ns ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
VGS DUT RL Gate Voltage Waveform ID td(on) Drain Current Waveform 0 VGS = 1 s Duty cycle 1 % tr td(off) tf 10 % VGS(on) 90 %
VDD RG PG. 0 10 % ID
10 %
90 % 90 %
2
2SJ243
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 240
PT - Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.0 cm2 x 0.64 mm Using ceramic substrate
100
dT - Derating Factor - %
200 160 120 80 40
80 60 40 20
0
20
40
60
80
100 120 140 160
0
30
TC - Case Temperature - C
60 90 120 150 180 TA - Ambient Temperature - C
210
TRANSFER CHARACTERISTICS VDS = -3 V Pulsed -10
ID - Drain Current - mA | yfs | - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 400 TA = 75 C 100 -25 C 30 150 C 10 25 C VDS = -3 V Pulsed
-100
150 C TA = -25 C 25 C
-1
-0.1 75 C -0.01
3
-0.001 -1.0
-1.5 -2.0 -2.5 -3.0 -3.5 VGS - Gate to Source Voltage - V
-4.0
1 -0.5 -1.0
-3.0 -10 -30 ID - Drain Current - mA
-100 -200
RDS(on) - Drain to Source On-State Resistance -
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 30 ID = -0.1 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = -2.5 V Pulsed 100 75 C 80 TA = -25 C 60 25 C 150 C
20 ID = -10 mA 10
40
0
-1
-2 -3 -4 -5 -6 -7 VGS - Gate to Source Voltage - V
-8
20 -0.3
-0.6
-1 -2 -5 ID - Drain Current - mA
-10
3
2SJ243
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 130 VGS = -4 V Pulsed 100 60
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS = -5 V f = 1 MHz Ciss 10 Coss 3 Crss 1 0.5 -0.3
Ciss, Coss, Crss - Capacitance - pF
-60
30
50
75 C
25 C TA = 150 C
0 -0.5
-25 C -1 -3 -10 -30 -1 -3 -10 VDS - Gate to Source Voltage - V -40
ID - Drain Current - mA
SWITCHING CHARACTERISTICS 500 -200 VDD = - 5 V VGS = - 5 V Rin = 10 200 100 tr
SOURCE TO DRAIN DIODE FORWARD VOLTAGE -100 -30 -10 -3 -1 -0.3 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 VSD - Source to Drain Voltage - V VGS = 0 Pulsed
td(on), tr, td(off), tf - Switching Time - ns
50
tf td(on)
20 td(off) 10 -6 -10 -30 -50 -100 ID - Drain Current - mA -300
4
ISD - Diode Forward Current - mA
2SJ243
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
5
2SJ243
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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